FFSP2065BDN-F085 Datasheet, Diode, ON Semiconductor

Download (Size : 296.73KB)

FFSP2065BDN-F085 Datasheet

FFSP2065BDN-F085 Features and benefits

* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .

FFSP2065BDN-F085 Application

* Automotive HEV−EV Onboard Chargers
* Automotive HEV−EV DC−DC Converters This document contains information on .

FFSP2065BDN-F085 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

Image gallery