* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .

* Automotive HEV−EV Onboard Chargers
* Automotive HEV−EV DC−DC Converters This document contains information on .

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

FFSP2065B

FFSP2065A

FFSP20120A

FFSP05120A

FFSP0665A

FFSP08120A

FFSP0865A

FFSP10120A

FFSP1265A

FFSP15120A

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